نسخه آزمایشی
شنبه ۳۱ شهریور ۱۳۹۷

رئیس دفتر ریاست، روابط عمومی و امور بین الملل

۱۳۹۷/۰۵/۱۱

a

Ali Naderi

Assistant Professor in Electronic Engineering   Department of Electrical Engineering,                                     

Kermanshah University of Technology,

Kermanshah, Iran

Email: a.naderi@kut.ac.ir

ACADEMIC AND RESEARCH EXPERIENCES

Education:

-Ph. D in Electronic Engineering, Semnan University, Semnan, Iran, Sep. 2009-July 2013.

-Visiting Scholar, Politechnico di Torino, Turin, Italy, Aug. 2012-Feb. 2013.

-M. Sc in Electronic Engineering,Semnan University, Semnan, Iran, Sep. 2007-Sep. 2009.

-B. Sc in Electronic Engineering,Razi University, Kermanshah, Iran, Sep. 2001-Sep. 2005.

Thesis:

- Ph. D: Characteristics evaluation and enhancing the performance of carbon nanotube field effect transistors by modifying the basic structure.

- M. Sc: Placement in Nano/CMOL FPGA circuits.

Honors:

Ranked First among all Ph. D graduated students of Electronic Engineering Department, Semnan university,  in 2013.

First graduated student from Semnan University in phd, Electronic Engineering.

Ranked First among all participants in Semnan University PhD exam of Electronic Engineering in 2009.

- Ranked First among all M. Sc graduated students of Electronic Engineering Department, Semnan University in 2009.

Research Area:

- Quantum Electronics

- Carbon Nanotube Field Effect Transistors

- Graphene Nanoribbon Field Effect Transistros

- Semiconductor Devices (SOI, MOSFET, MESFET)

- VLSI Circuit Design

- Application of optimization techniques and artificial intelligence in electronic engineering

-Digital Design projects

Publications:

Journal papers:

[1] A. Naderi, P. Keshavarzi, “Novel carbon nanotube field effect transistor with graded double halo channel”, Superlattices and Microstructures, vol. 51, 2012, pp. 668-679.

[2] A. Naderi, P. Keshavarzi, “The effects of source/drain and gate overlap on the performance of carbon nanotube field effect transistors”, Superlattices and Microstructures,Vol. 52, 2012, pp. 962–976.

[3] A. Naderi, S. Mohammad Noorbakhsh, H. Elahipanah, “Temperature Dependence of Electrical Characteristics of Carbon Nanotube Field-Effect Transistors: A Quantum Simulation Study”, Journal of Nanomaterials, 2012.

[4] A. Naderi, P. Keshavarzi, A. A. Orouji, “LDC-CNTFET: A carbon nanotube field effect transistor with linear doping profile channel”, Superlattices and microstructures, vol. 50, 2011, pp. 145-156.

[5] M. Hayati, A. Rezaee, M. Seifi, A. Naderi, “Modeling and Simulation of Combinational CMOS Logic Circuits by ANFIS”, Microelectronics journal, vol. 54, 2010, pp. 52–57.

[6] Z. Jamalabadi, P. Keshavarzi, A. Naderi, “SDC–CNTFET: Stepwise Doping Channel design in carbon nanotube field effect transistors for improving short channel Effects immunity”, International journal of modern physics B, Vol. 28, No. 7, 2014.

[7] A. Naderi, “Numerical Study of Carbon Nanotube Field Effect Transistors in Presence of Carbon-Carbon Third Nearest Neighbor Interactions”, International journal of modern physics B, 2014, Vol. 28, No. 24, 2014.

[8] A. Naderi, P. Keshavarzi, Electrically-Activated Source Extension Graphene Nanoribbon Field Effect Transistor: Novel Attributes and Design Considerations for Suppressing Short Channel Effects”, Superlattices and microstructures, 2014.

[9] A. Naderi,Theoretical analysis of a novel dual gate metal–graphene nanoribbon field effect transistor, Materials Science in Semiconductor Processing 31, 2015, pp. 223–228.

[10] A. Naderi, Double gate graphene nanoribbon field effect transistor with single halo pocket in channel region, Superlattices and microstructures, vol. 89, 2016, pp. 170-178.

[11] A. Naderi, S. Ahmadmiri, Attributes in the Performance and Design Considerations of Asymmetric Drain and Source Regions in Carbon Nanotube Field Effect Transistors: Quantum Simulation Study, ECS journal of solid state science and technology, Vol. 7, 2016, pp. 63-68.

[12] B. Abdi, A. Naderi, SLD-MOSCNT: A new MOSCNT with Step-Linear Doping profile in the source and drain regions, International Journal of Modern Physics B, Vol. 30, 2016, pp. 1650242.

[13] A. Naderi, B. Abdi, T-CNTFET with gate-drain overlap and two different gate metals: a novel structure with increased saturation current, ECS journal of solid state science and technology, Vol. 8, 2016, pp. 3032-3036.

[14] A. Naderi, Double gate graphene nanoribbon field effect transistor with electrically induced junctions for source and drain regions, Journal of computational electronics, Vol. 15, 2015, pp. 347-357.

[15] A. Naderi, B. Abdi, Review– methods in improving the performance of carbon nanotube field effect transistors, Vol. 5, 2016, pp. 131-140.

[16] A. Naderi, Higher current ratio and improved ambipolar behavior in graphene nanoribbon field effect transistors by symmetric pocket doping profile, ECS journal of solid state science and technology, Vol. 5, 2016, pp. M1-M6.

[17] A Naderi, Improvement in the performance of graphene nanoribbon pin tunneling field effect transistors by applying lightly doped profile on drain region, International Journal of Modern Physics B, 1750248, 2017.

[18] H Mohammadi, A Naderi, A Novel SOI-MESFET with Parallel Oxide-Metal Layers for High Voltage and Radio Frequency Applications, AEU-International Journal of Electronics and Communications, 2017.

[19] A Naderi, B Abdi Tahne, Band bending engineering in pin gate all around Carbon nanotube field effect transistors by multi-segment gate, International Journal of Nano Dimension, 2017.

[20] A Naderi, F Heirani, Improvement in the performance of SOI-MESFETs by T-shaped oxide part at channel region: DC and RF characteristics, Superlattices and Microstructures, 2017.

[21] A Naderi, M. Ghodrati, Improving band to band tunneling in tunneling carbon nanotube field effect transistor by multi-level development of impurities in drain region, The European Physical Journal Plus, 2017.

[22] A Naderi, M. Ghodrati, Novel carbon nanotube field effect transistor with lightly doped channel and dual section dielectric, JIAEE, 2017.

[23] B. Abdi, A. Naderi , A new tunneling carbon nanotube field effect transistor with linear doping profile at drain region: numerical simulation study, Modeling in engineering, 2018.

Conference  papers:

[24] M. Giorcelli, P. Savi , A. Naderi, A. Tagliaferro, “Wide band microwave characterization of Mwcnts/epoxy composites”, 6th ECCOMAS, 2013, Torino, Italy.

[25] A. Naderi, P. Keshavarzi, A. A. Orouji, “Single Kappa Halo Carbon Nanotube Field Effect Transistor: A Novel Device for Short Channel Effects Improvement without Reducing Saturation Current”, 5thSASTech 2011, Mashhad, Iran.

[26] A. Naderi, P. Keshavarzi, H. Elahipanah, “The Impact of Varying Temperature on Performance of Carbon Nanotube Field-Effect Transistors”, MINO 10, Italy, Catania, 2010.

[27] H. Hamidipour, P. Keshavarzi, A. Naderi, “Routing congestion Removing of Nano/CMOS FPGA circuits”, 6th Nanoscience and Nanotechnology Conference, Izmir, Turkey, 2010, Poster.

[28] M. Abtin, P. Keshavarzi, K. Jaferzadeh, A. Naderi, “Modeling Double Gate Fin FETs by Using Artificial Neural Networks”, international conference on semiconductor electronic, IEEE, Melaka, Malaysia, 2010.

[29] H. Hamidipour, P. Keshavarzi, A. Naderi, “Routing Congestion Removing Of CMOL FPGA Circuits By A Recursive Method”, MINO 10, Italy, Catania, 2010.

[30] A. Naderi, A. A. Orouji, P. Keshavarzi, “Investigation of Channel Impurity Impacts on Carbon Nanotube Field Effect Transistors by Self-Consistent Solution Between Poisson and Schrodinger Equations with Open Boundary Conditions “, Selected topics in mathematical methods and computational techniques in electrical engineering, Romania, 2010.

[31] A. Naderi, P. Keshavarzi, “Lightly Doped Drain Graded Double Halo CNTFET (LDD-GDH-CNTFET)”, Iranian society of Nanomedicine, Tehran, Iran, 2013.

[32] A. Naderi, “Numerical Simulation Study of Cut Off Frequency in DifferentStructures of Carbon Nanotube Field Effect Transistors”, NANOTR10, Istanbul, Turkey, 2014.

[33] Z. Mahmoudi, A. Naderi, “A Novel Carbon Nanotube Field Effect Transistor with Double Stepwise Doping Channel”, NANOTR10, Istanbul, Turkey, 2014.

[34] M. Ghodrati, A. Naderi, “A New Carbon Nanotube Field Effect Transistorwith Stepwise Lightly Doped Drain and Source Regions”, NANOTR10, Istanbul, Turkey, 2014.

[35] B. Abdi Tahne, A. Naderi, Designing a new MOSCNT using different doping profiles in source and drain regions, ICN2015, 2015, Istanbul, Turkey.

]36[ رقيه موسوي، علي نادري، مطالعه نوسانات زيرآستانه در ترانزيستورهاي اثرميداني نانولوله کربني تونل زني و بهبود آن با تغيير ساختار پايه، سومين کنفرانس بين المللي مهندسي برق، کنترل و الکترونيک، آبان 95، مشهد.

]37[ علي نادري، استفاده از جاذب حفره‌ها در ترانزيستورهاي اثر ميدان فلز-نيمه هادي جهت بهبود ولناژ شکست، سومين کنفرانس بين المللي مهندسي برق، کنترل و الکترونيک، آبان 95، مشهد.

]38[ سجاد عبدلي، علي نادري، روشي جديد براي استخراج بدون محدوديت پلاک خودرو از يک تصوير با استفاده از عمليات لبه يابي و مورفولوژيکي، اولين همايش ملي کاربرد سيستمهاي هوشمند در مهندسي برق و کامپيوتر و فناوري اطلاعات، اسفند 94، شبستر.

]39[ سجاد عبدلي، علي نادري، تشخيص پلاک خودرو با استفاده از دو الگوريتم مجزا براي تشخيص اعداد و حروف جهت کاهش خطا، اولين همايش ملي کاربرد سيستمهاي هوشمند در مهندسي برق و کامپيوتر و فناوري اطلاعات، اسفند 94، شبستر.

[40] Ali Naderi, The performance analysis and comparison between n-i-n and p-i-n carbon nanotube field effect transistors, 7th International Conference on Nanotechnology (ICN-2017), 7-8 September 2017, Tbilisi, Georgia.

[41] Ali Naderi, Lower leakage current and higher current ratio for carbon nanotube field effect transistors by symmetric downward doping at drain and source regions, , 7th International Conference on Nanotechnology (ICN-2017), 7-8 September 2017, Tbilisi, Georgia.

]42[ علي نادري، مريم قدرتي، بررسی اثر تغییر ثابت دی‌الکتریک گیت بر عملکرد ترانزیستور اثر میدانی نانولوله کربنی تونل‌زنی با حل عددي خودسازگار معادلات پواسون و شرودينگر، دومين کنفرانس ملي محاسبات نرم، دانشگاه گيلان، 1396

]43[ علي نادري، کامران مرادي، ساختار يک ترانزیستور سیلیکون بر روی عایق داراي دو دندانه در ناحيه کانال جهت کاربردهاي با ولتاژ شکست بالا: شبيه سازي عددي دوبعدي ، دومين کنفرانس ملي محاسبات نرم، دانشگاه گيلان، 1396

Book Chapter:

[44] P. Jagdale, A. Naderi, I. Roppolo, I.Rattalino,A. Tagliaferro, A. Chiolerio, MWCNT polymer composites for Piezoresistivity and percolation – Principles and Applications, Chapter 8, in Carbon for sensing devices, Editor: Prof. Alberto Tagliaferro, Springer, 2015.

Research projects:

-Simulation of graphene nanoibbon field effect transistors by self-consistent solution of Poisson and Schroodinger equation, Kermanshah university of technology, 2014.

-Design and Fabrication of Piezoresistive sensors by CNTs, Polytechnico di Torino, Turin, Italy, 2012-2013.

-Design of Nano/CMOL adder circuits, Semnan University, 2011.

طراحي و پياده سازي نرم افزار اندرويد براي ميکروکنترلرهاي AVR و PIC، دانشگاه صنعتي کرمانشاه، 94

- بررسي مدلسازي و شبيه‌سازي خازن‌هاي الکترواستاتيکي و کوانتومي در ترانزيستورهاي در مقياس نانو، دانشگاه صنعتي کرمانشاه، 94

- طراحي و ساخت قفل الکتريکي با امنيت بالا و کنترل از طريق پيامک، دانشگاه صنعتي کرمانشاه، 95

- مطالعه افزاره‌هاي اثرميدان فلز- نيمه هادي Ga-As در مصارف ولتاژ بالا و ارائه راهکارهايي جهت ارتقاي کارايي آن‌ها، دانشگاه صنعتي کرمانشاه، 94

- بررسي اثرات تغيير دماي محيط بر فرکانس قطع ترانزيستورهاي تونل زني نانولوله کربني، دانشگاه صنعتي کرمانشاه، 96

- بررسي و شبيه‌سازي استفاده از نانوساختارهاي فلزي جهت اعمال ولتاژ درين و سورس به کانال نانوترانزيستورهاي اثرميدان، ، دانشگاه صنعتي کرمانشاه، 96

Referee in ISI journals:

-Physica E, Elsevier.

-International Journal of Electronics, Taylor and Francis

-Superlattices and Microstructures, Elsevier.

-Microelectronic Journal, Elsevier.

-Computational Electronic-Springer.

-IETE Technical Review,Taylor and Francis.

-IEEE transactions on device and materials reliability, IEEE.

-Journal of solid state science and technology, ECS.

-Journal of electronic materials, Springer.

.

Language Skills:

Persian and Kurdish: native.

English: Speak, read and write fluently.

Italiano: elementary.

Academic Teaching and thesis supervision Experiences:

  • Teaching electronic engineering courses, BS and MSc, in Semnan university and Kermanshah university of technology since 2009.
    Teaching Semiconductor devices and VLSI designcourses in Kermanshah university of technology and Islamic azad university, science and research branch of Kermanshah from 2013 till now.
    Supervisory of more than 25 Msc thesis in Kermanshah university of technology and Islamic azad university. (18-finished, 10 in progress)

INDUSTRIAL JOB EXPERIENCES

Job titles:

Project Manager, Hamrah-e-AvalMobile network planning and implementation, Ilam province GC project, 900 and 1800 bands, Arvand Negar Pooya Company, 2007-2008.

Site design and acquisition manager, Hamrah-e-Aval Mobile network project, Kermanshah city, Kavoshcom Asia Company, 2006-2007.

Related abilities:

Project management

Mobile Site implementation and commissioning from BTS to BSC

Mobile Networks Site designing and acquisition

Earth and Grounding systems

Mobile Network designing

. . .